001     903222
005     20240712084453.0
020 _ _ |a 978-3-95806-591-8
024 7 _ |2 Handle
|a 2128/30129
024 7 _ |2 URN
|a urn:nbn:de:0001-2022011200
037 _ _ |a FZJ-2021-04929
100 1 _ |0 P:(DE-Juel1)168198
|a Liu, Yong
|b 0
|e Corresponding author
245 _ _ |a Catalytic-doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells
|f - 2022-01-12
260 _ _ |a Jülich
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
|c 2021
300 _ _ |a 126
336 7 _ |2 DataCite
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336 7 _ |2 ORCID
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336 7 _ |2 BibTeX
|a PHDTHESIS
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|2 EndNote
|a Thesis
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|a Dissertation / PhD Thesis
|b phd
|m phd
|s 1641977647_1193
336 7 _ |2 DRIVER
|a doctoralThesis
490 0 _ |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment
|v 556
502 _ _ |a Dissertation, RWTH Aachen University, 2021
|b Dissertation
|c RWTH Aachen University
|d 2021
520 _ _ |a To make this planet cleaner and more sustainable, photovoltaic (PV) has longbeen on its road to pursue higher eciency () and larger market share. Siliconheterojunction (SHJ) solar cell is considered as one of the most promising candidatesas next-generation high-eciency PV techniques due to their high eciencies andsimple production sequences. Eciency over 26% in research level and over 23% inmass production have been achieved based on SHJ concept. However, there are stillseveral eciency-limiting issues for SHJ solar cells. The rst one is the parasiticabsorption in short wavelength range caused by front side doped amorphous(a-Si:H)layers. Many new materials (such as c-Si:H, nc-SiOx:H and c-SiC:H) have beenproposed to overcome this problem, yet the trade-o between optical and electricalproperties still exists. The second one is that sucient thickness of a-Si:H(i) layeris needed for good passivation, but the a-Si:H(i) layer acts as isolation for electricaltransport. Therefore, another trade-o exists between passivation and electricaltransport.
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856 4 _ |u https://juser.fz-juelich.de/record/903222/files/Energie_Umwelt_556.pdf
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914 1 _ |y 2021
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