%0 Journal Article
%A Kuo, Cheng-Tai
%A Lin, Shih-Chieh
%A Rueff, Jean-Pascal
%A Chen, Zhesheng
%A Aguilera, Irene
%A Bihlmayer, Gustav
%A Plucinski, Lukasz
%A Graff, Ismael L.
%A Conti, Giuseppina
%A Vartanyants, Ivan A.
%A Schneider, Claus M.
%A Fadley, Charles S.
%T Orbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3
%J Physical review / B
%V 104
%N 24
%@ 1098-0121
%C Woodbury, NY
%I Inst.
%M FZJ-2021-04948
%P 245105
%D 2021
%X n this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000733614100002
%R 10.1103/PhysRevB.104.245105
%U https://juser.fz-juelich.de/record/903241