Journal Article

FZJ-2021-04948

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Orbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3

Kuo, C.-T. (Corresponding author) ; Lin, S.-C. ; Rueff, J.-P. ; Chen, Z. ; Aguilera, I.FZJ* ; Bihlmayer, G.FZJ* ; Plucinski, L.FZJ* ; Graff, I. L. ; Conti, G. ; Vartanyants, I. A. ; Schneider, C. M.FZJ* ; Fadley, C. S.

2021
Inst. Woodbury, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/29364  doi:10.1103/PhysRevB.104.245105

Abstract: n this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.

---

Contributing Institute(s):

1. Quanten-Theorie der Materialien (PGI-1)
2. Quanten-Theorie der Materialien (IAS-1)
3. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 5211 - Topological Matter (POF4-521) (POF4-521)

Appears in the scientific report 2021

---

Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

---