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000903241 1001_ $$00000-0001-7721-6481$$aKuo, Cheng-Tai$$b0$$eCorresponding author
000903241 245__ $$aOrbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3
000903241 260__ $$aWoodbury, NY$$bInst.$$c2021
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000903241 520__ $$an this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
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000903241 7001_ $$00000-0002-0759-7095$$aLin, Shih-Chieh$$b1
000903241 7001_ $$00000-0003-3594-918X$$aRueff, Jean-Pascal$$b2
000903241 7001_ $$0P:(DE-HGF)0$$aChen, Zhesheng$$b3
000903241 7001_ $$0P:(DE-Juel1)145750$$aAguilera, Irene$$b4
000903241 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, Gustav$$b5$$ufzj
000903241 7001_ $$0P:(DE-Juel1)130895$$aPlucinski, Lukasz$$b6$$ufzj
000903241 7001_ $$00000-0002-2518-2512$$aGraff, Ismael L.$$b7
000903241 7001_ $$0P:(DE-HGF)0$$aConti, Giuseppina$$b8
000903241 7001_ $$00000-0002-0340-8234$$aVartanyants, Ivan A.$$b9
000903241 7001_ $$0P:(DE-Juel1)130948$$aSchneider, Claus M.$$b10
000903241 7001_ $$0P:(DE-HGF)0$$aFadley, Charles S.$$b11
000903241 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.104.245105$$gVol. 104, no. 24, p. 245105$$n24$$p245105$$tPhysical review / B$$v104$$x1098-0121$$y2021
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