TY  - JOUR
AU  - Kuo, Cheng-Tai
AU  - Lin, Shih-Chieh
AU  - Rueff, Jean-Pascal
AU  - Chen, Zhesheng
AU  - Aguilera, Irene
AU  - Bihlmayer, Gustav
AU  - Plucinski, Lukasz
AU  - Graff, Ismael L.
AU  - Conti, Giuseppina
AU  - Vartanyants, Ivan A.
AU  - Schneider, Claus M.
AU  - Fadley, Charles S.
TI  - Orbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3
JO  - Physical review / B
VL  - 104
IS  - 24
SN  - 1098-0121
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2021-04948
SP  - 245105
PY  - 2021
AB  - n this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000733614100002
DO  - DOI:10.1103/PhysRevB.104.245105
UR  - https://juser.fz-juelich.de/record/903241
ER  -