%0 Journal Article
%A Li, Shenghao
%A Pomaska, Manuel
%A Hoß, Jan
%A Lossen, Jan
%A Qiu, Kaifu
%A Hong, Ruijiang
%A Finger, Friedhelm
%A Rau, Uwe
%A Ding, Kaining
%T High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min
%J Progress in photovoltaics
%V 29
%N 1
%@ 1062-7995
%C Chichester
%I Wiley
%M FZJ-2021-05676
%P 16 - 23
%D 2021
%X Hot-wire chemical vapor deposition was utilized to develop rapidly grown and high-quality phosphorus-doped amorphous silicon (a-Si:H) thin films for poly-crystalline silicon on tunnel oxide carrier-selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus-doped a-Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus-doped a-Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high-temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field-effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high-temperature process steps. By optimizing the deposition parameters, a firing-stable-implied open-circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2 were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2 were achieved at an even higher deposition rate of 150 nm/min.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000562546600001
%R 10.1002/pip.3333
%U https://juser.fz-juelich.de/record/904106