Journal Article

FZJ-2021-05676

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min

Li, S.Extern* ; Pomaska, M.FZJ* ; Hoß, J. ; Lossen, J.Extern* ; Qiu, K. ; Hong, R. (Corresponding author) ; Finger, F.FZJ* ; Rau, U.FZJ* ; Ding, K. (Corresponding author)FZJ*

2021
Wiley Chichester

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Please use a persistent id in citations: http://hdl.handle.net/2128/30271  doi:10.1002/pip.3333

Abstract: Hot-wire chemical vapor deposition was utilized to develop rapidly grown and high-quality phosphorus-doped amorphous silicon (a-Si:H) thin films for poly-crystalline silicon on tunnel oxide carrier-selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus-doped a-Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus-doped a-Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high-temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field-effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high-temperature process steps. By optimizing the deposition parameters, a firing-stable-implied open-circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2 were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2 were achieved at an even higher deposition rate of 150 nm/min.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 1213 - Cell Design and Development (POF4-121) (POF4-121)
2. Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D) (0324198D)

Appears in the scientific report 2021

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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