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000904106 0247_ $$2doi$$a10.1002/pip.3333
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000904106 0247_ $$2ISSN$$a1099-159X
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000904106 1001_ $$0P:(DE-Juel1)174415$$aLi, Shenghao$$b0
000904106 245__ $$aHigh‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min
000904106 260__ $$aChichester$$bWiley$$c2021
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000904106 520__ $$aHot-wire chemical vapor deposition was utilized to develop rapidly grown and high-quality phosphorus-doped amorphous silicon (a-Si:H) thin films for poly-crystalline silicon on tunnel oxide carrier-selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus-doped a-Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus-doped a-Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high-temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field-effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high-temperature process steps. By optimizing the deposition parameters, a firing-stable-implied open-circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2 were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2 were achieved at an even higher deposition rate of 150 nm/min.
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000904106 536__ $$0G:(BMWi)0324198D$$aVerbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D)$$c0324198D$$x1
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000904106 7001_ $$0P:(DE-Juel1)162141$$aPomaska, Manuel$$b1
000904106 7001_ $$0P:(DE-HGF)0$$aHoß, Jan$$b2
000904106 7001_ $$00000-0003-4981-8674$$aLossen, Jan$$b3
000904106 7001_ $$0P:(DE-Juel1)178049$$aQiu, Kaifu$$b4
000904106 7001_ $$0P:(DE-HGF)0$$aHong, Ruijiang$$b5$$eCorresponding author
000904106 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b6
000904106 7001_ $$0P:(DE-Juel1)130285$$aRau, Uwe$$b7
000904106 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b8$$eCorresponding author
000904106 773__ $$0PERI:(DE-600)2023295-0$$a10.1002/pip.3333$$gVol. 29, no. 1, p. 16 - 23$$n1$$p16 - 23$$tProgress in photovoltaics$$v29$$x1062-7995$$y2021
000904106 8564_ $$uhttps://juser.fz-juelich.de/record/904106/files/Progress%20in%20Photovoltaics%20-%202020%20-%20Li%20-%20High%25u2010quality%20amorphous%20silicon%20thin%20films%20for%20tunnel%20oxide%20passivating%20contacts.pdf$$yRestricted
000904106 8564_ $$uhttps://juser.fz-juelich.de/record/904106/files/Pre-print%20Shenghao.pdf$$yPublished on 2020-08-26. Available in OpenAccess from 2021-08-26.
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