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@ARTICLE{Li:904106,
      author       = {Li, Shenghao and Pomaska, Manuel and Hoß, Jan and Lossen,
                      Jan and Qiu, Kaifu and Hong, Ruijiang and Finger, Friedhelm
                      and Rau, Uwe and Ding, Kaining},
      title        = {{H}igh‐quality amorphous silicon thin films for tunnel
                      oxide passivating contacts deposited at over 150 nm/min},
      journal      = {Progress in photovoltaics},
      volume       = {29},
      number       = {1},
      issn         = {1062-7995},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2021-05676},
      pages        = {16 - 23},
      year         = {2021},
      abstract     = {Hot-wire chemical vapor deposition was utilized to develop
                      rapidly grown and high-quality phosphorus-doped amorphous
                      silicon (a-Si:H) thin films for poly-crystalline silicon on
                      tunnel oxide carrier-selective passivating contacts.
                      Deposition rates higher than 150 nm/min were obtained for
                      the in situ phosphorus-doped a-Si:H layers. To optimize the
                      passivating contact performance, material properties such as
                      microstructures as well as hydrogen content were
                      characterized and analyzed for these phosphorus-doped a-Si:H
                      films. The results show that a certain microstructure of the
                      films is crucial for the passivation quality and the
                      conductance of passivating contacts. Porous silicon layers
                      were severely oxidized during high-temperature
                      crystallization, giving rise to very low conductance. The
                      insufficient effective doping concentration in these layers
                      also yields inferior passivation quality due to lack of
                      field-effect passivation. On the other hand, dense silicon
                      layers are insensitive to oxidation but very sensitive to
                      blistering of the films during the subsequent
                      high-temperature process steps. By optimizing the deposition
                      parameters, a firing-stable-implied open-circuit voltage of
                      737 mV and a contact resistivity of 10 mΩ·cm2 were
                      achieved at a high deposition rate of 100 nm/min while 733
                      mV and 90 mΩ·cm2 were achieved at an even higher
                      deposition rate of 150 nm/min.},
      cin          = {IEK-5},
      ddc          = {690},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
                      Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
                      Solarzellen mit passivierendem Tunnelkontakt und
                      funktionalen Schichten aus katalytischer und
                      plasmaunterstützter chemischer Gasphasenab (0324198D)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324198D},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000562546600001},
      doi          = {10.1002/pip.3333},
      url          = {https://juser.fz-juelich.de/record/904106},
}