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| Hauptseite > Publikationsdatenbank > High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min > print |
| Hauptseite > Publikationsdatenbank > High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min > print |
| 001 | 904106 | ||
| 005 | 20240712084513.0 | ||
| 024 | 7 | _ | |a 10.1002/pip.3333 |2 doi |
| 024 | 7 | _ | |a 1062-7995 |2 ISSN |
| 024 | 7 | _ | |a 1099-159X |2 ISSN |
| 024 | 7 | _ | |a 2128/30271 |2 Handle |
| 024 | 7 | _ | |a WOS:000562546600001 |2 WOS |
| 037 | _ | _ | |a FZJ-2021-05676 |
| 082 | _ | _ | |a 690 |
| 100 | 1 | _ | |a Li, Shenghao |0 P:(DE-Juel1)174415 |b 0 |
| 245 | _ | _ | |a High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min |
| 260 | _ | _ | |a Chichester |c 2021 |b Wiley |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1642413949_26836 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Hot-wire chemical vapor deposition was utilized to develop rapidly grown and high-quality phosphorus-doped amorphous silicon (a-Si:H) thin films for poly-crystalline silicon on tunnel oxide carrier-selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus-doped a-Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus-doped a-Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high-temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field-effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high-temperature process steps. By optimizing the deposition parameters, a firing-stable-implied open-circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2 were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2 were achieved at an even higher deposition rate of 150 nm/min. |
| 536 | _ | _ | |a 1213 - Cell Design and Development (POF4-121) |0 G:(DE-HGF)POF4-1213 |c POF4-121 |f POF IV |x 0 |
| 536 | _ | _ | |a Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D) |0 G:(BMWi)0324198D |c 0324198D |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 700 | 1 | _ | |a Pomaska, Manuel |0 P:(DE-Juel1)162141 |b 1 |
| 700 | 1 | _ | |a Hoß, Jan |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Lossen, Jan |0 0000-0003-4981-8674 |b 3 |
| 700 | 1 | _ | |a Qiu, Kaifu |0 P:(DE-Juel1)178049 |b 4 |
| 700 | 1 | _ | |a Hong, Ruijiang |0 P:(DE-HGF)0 |b 5 |e Corresponding author |
| 700 | 1 | _ | |a Finger, Friedhelm |0 P:(DE-Juel1)130238 |b 6 |
| 700 | 1 | _ | |a Rau, Uwe |0 P:(DE-Juel1)130285 |b 7 |
| 700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 8 |e Corresponding author |
| 773 | _ | _ | |a 10.1002/pip.3333 |g Vol. 29, no. 1, p. 16 - 23 |0 PERI:(DE-600)2023295-0 |n 1 |p 16 - 23 |t Progress in photovoltaics |v 29 |y 2021 |x 1062-7995 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/904106/files/Progress%20in%20Photovoltaics%20-%202020%20-%20Li%20-%20High%25u2010quality%20amorphous%20silicon%20thin%20films%20for%20tunnel%20oxide%20passivating%20contacts.pdf |y Restricted |
| 856 | 4 | _ | |y Published on 2020-08-26. Available in OpenAccess from 2021-08-26. |u https://juser.fz-juelich.de/record/904106/files/Pre-print%20Shenghao.pdf |
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