%0 Journal Article
%A Yang, Qing
%A Liu, Zunke
%A Lin, Yiran
%A Liu, Wei
%A Liao, Mingdun
%A Feng, Mengmeng
%A Zhi, Yuyan
%A Zheng, Jingming
%A Lu, Linna
%A Ma, Dian
%A Han, Qingling
%A Cheng, Hao
%A Yang, Zhenhai
%A Ding, Kaining
%A Duan, Weiyuan
%A Chen, Hui
%A Wang, Yuming
%A Zeng, Yuheng
%A Yan, Baojie
%A Ye, Jichun
%T Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells
%J Solar RRL
%V 5
%N 11
%@ 2367-198X
%C Weinheim
%I Wiley-VCH
%M FZJ-2021-05691
%P 2100644 -
%D 2021
%X A P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000697207000001
%R 10.1002/solr.202100644
%U https://juser.fz-juelich.de/record/904121