%0 Journal Article %A Yang, Qing %A Liu, Zunke %A Lin, Yiran %A Liu, Wei %A Liao, Mingdun %A Feng, Mengmeng %A Zhi, Yuyan %A Zheng, Jingming %A Lu, Linna %A Ma, Dian %A Han, Qingling %A Cheng, Hao %A Yang, Zhenhai %A Ding, Kaining %A Duan, Weiyuan %A Chen, Hui %A Wang, Yuming %A Zeng, Yuheng %A Yan, Baojie %A Ye, Jichun %T Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells %J Solar RRL %V 5 %N 11 %@ 2367-198X %C Weinheim %I Wiley-VCH %M FZJ-2021-05691 %P 2100644 - %D 2021 %X A P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells. %F PUB:(DE-HGF)16 %9 Journal Article %U <Go to ISI:>//WOS:000697207000001 %R 10.1002/solr.202100644 %U https://juser.fz-juelich.de/record/904121