Journal Article

FZJ-2021-05691

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

Yang, Q.FZJ* ; Liu, Z. ; Lin, Y. ; Liu, W. ; Liao, M. ; Feng, M. ; Zhi, Y. ; Zheng, J. ; Lu, L. ; Ma, D. ; Han, Q. ; Cheng, H. ; Yang, Z. ; Ding, K.FZJ* ; Duan, W.FZJ* ; Chen, H. ; Wang, Y. ; Zeng, Y. ; Yan, B. ; Ye, J. (Corresponding author)

2021
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/solr.202100644

Abstract: A P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 1213 - Cell Design and Development (POF4-121) (POF4-121)

Appears in the scientific report 2022

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Database coverage:
Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Essential Science Indicators ; IF >= 5 ; JCR ; Science Citation Index Expanded ; Web of Science Core Collection

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