000904121 001__ 904121
000904121 005__ 20240712084513.0
000904121 0247_ $$2doi$$a10.1002/solr.202100644
000904121 0247_ $$2WOS$$aWOS:000697207000001
000904121 037__ $$aFZJ-2021-05691
000904121 082__ $$a600
000904121 1001_ $$0P:(DE-Juel1)188101$$aYang, Qing$$b0$$ufzj
000904121 245__ $$aPassivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells
000904121 260__ $$aWeinheim$$bWiley-VCH$$c2021
000904121 3367_ $$2DRIVER$$aarticle
000904121 3367_ $$2DataCite$$aOutput Types/Journal article
000904121 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1674127655_20397
000904121 3367_ $$2BibTeX$$aARTICLE
000904121 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000904121 3367_ $$00$$2EndNote$$aJournal Article
000904121 520__ $$aA P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells.
000904121 536__ $$0G:(DE-HGF)POF4-1213$$a1213 - Cell Design and Development (POF4-121)$$cPOF4-121$$fPOF IV$$x0
000904121 588__ $$aDataset connected to CrossRef, Journals: juser.fz-juelich.de
000904121 7001_ $$aLiu, Zunke$$b1
000904121 7001_ $$aLin, Yiran$$b2
000904121 7001_ $$aLiu, Wei$$b3
000904121 7001_ $$aLiao, Mingdun$$b4
000904121 7001_ $$aFeng, Mengmeng$$b5
000904121 7001_ $$aZhi, Yuyan$$b6
000904121 7001_ $$aZheng, Jingming$$b7
000904121 7001_ $$aLu, Linna$$b8
000904121 7001_ $$aMa, Dian$$b9
000904121 7001_ $$aHan, Qingling$$b10
000904121 7001_ $$aCheng, Hao$$b11
000904121 7001_ $$aYang, Zhenhai$$b12
000904121 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b13
000904121 7001_ $$0P:(DE-Juel1)169946$$aDuan, Weiyuan$$b14
000904121 7001_ $$aChen, Hui$$b15
000904121 7001_ $$aWang, Yuming$$b16
000904121 7001_ $$00000-0002-0193-9971$$aZeng, Yuheng$$b17
000904121 7001_ $$aYan, Baojie$$b18
000904121 7001_ $$0P:(DE-HGF)0$$aYe, Jichun$$b19$$eCorresponding author
000904121 773__ $$0PERI:(DE-600)2882014-9$$a10.1002/solr.202100644$$gVol. 5, no. 11, p. 2100644 -$$n11$$p2100644 -$$tSolar RRL$$v5$$x2367-198X$$y2021
000904121 8564_ $$uhttps://juser.fz-juelich.de/record/904121/files/Solar%20RRL%20-%202021%20-%20Yang%20-%20Passivating%20Contact%20with%20Phosphorus%25u2010Doped%20Polycrystalline%20Silicon%25u2010Nitride%20with%20an%20Excellent.pdf$$yRestricted
000904121 909CO $$ooai:juser.fz-juelich.de:904121$$pVDB
000904121 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)188101$$aForschungszentrum Jülich$$b0$$kFZJ
000904121 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130233$$aForschungszentrum Jülich$$b13$$kFZJ
000904121 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)169946$$aForschungszentrum Jülich$$b14$$kFZJ
000904121 9131_ $$0G:(DE-HGF)POF4-121$$1G:(DE-HGF)POF4-120$$2G:(DE-HGF)POF4-100$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-1213$$aDE-HGF$$bForschungsbereich Energie$$lMaterialien und Technologien für die Energiewende (MTET)$$vPhotovoltaik und Windenergie$$x0
000904121 9141_ $$y2022
000904121 915__ $$0StatID:(DE-HGF)3001$$2StatID$$aDEAL Wiley$$d2021-01-29$$wger
000904121 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSOL RRL : 2019$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)0113$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2021-01-29
000904121 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bSOL RRL : 2019$$d2021-01-29
000904121 920__ $$lyes
000904121 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000904121 980__ $$ajournal
000904121 980__ $$aVDB
000904121 980__ $$aI:(DE-Juel1)IEK-5-20101013
000904121 980__ $$aUNRESTRICTED
000904121 981__ $$aI:(DE-Juel1)IMD-3-20101013