TY  - JOUR
AU  - Yang, Qing
AU  - Liu, Zunke
AU  - Lin, Yiran
AU  - Liu, Wei
AU  - Liao, Mingdun
AU  - Feng, Mengmeng
AU  - Zhi, Yuyan
AU  - Zheng, Jingming
AU  - Lu, Linna
AU  - Ma, Dian
AU  - Han, Qingling
AU  - Cheng, Hao
AU  - Yang, Zhenhai
AU  - Ding, Kaining
AU  - Duan, Weiyuan
AU  - Chen, Hui
AU  - Wang, Yuming
AU  - Zeng, Yuheng
AU  - Yan, Baojie
AU  - Ye, Jichun
TI  - Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells
JO  - Solar RRL
VL  - 5
IS  - 11
SN  - 2367-198X
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2021-05691
SP  - 2100644 -
PY  - 2021
AB  - A P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000697207000001
DO  - DOI:10.1002/solr.202100644
UR  - https://juser.fz-juelich.de/record/904121
ER  -