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@ARTICLE{Yang:904121,
      author       = {Yang, Qing and Liu, Zunke and Lin, Yiran and Liu, Wei and
                      Liao, Mingdun and Feng, Mengmeng and Zhi, Yuyan and Zheng,
                      Jingming and Lu, Linna and Ma, Dian and Han, Qingling and
                      Cheng, Hao and Yang, Zhenhai and Ding, Kaining and Duan,
                      Weiyuan and Chen, Hui and Wang, Yuming and Zeng, Yuheng and
                      Yan, Baojie and Ye, Jichun},
      title        = {{P}assivating {C}ontact with {P}hosphorus‐{D}oped
                      {P}olycrystalline {S}ilicon‐{N}itride with an {E}xcellent
                      {I}mplied {O}pen‐{C}ircuit {V}oltage of 745 m{V} and {I}ts
                      {A}pplication in $23.88\%$ {E}fficiency {TOPC}on {S}olar
                      {C}ells},
      journal      = {Solar RRL},
      volume       = {5},
      number       = {11},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-05691},
      pages        = {2100644 -},
      year         = {2021},
      abstract     = {A P-doped polycrystalline silicon-nitride (n-poly-SiN x )
                      as the electron selective collection layer in a tunnel oxide
                      passivated contact (TOPCon) solar cell is reported. The
                      nitrogen content is controlled by the active gas ratio of
                      R = NH3/(SiH4 + NH3) during the plasma-enhanced
                      chemical vapor deposition (PECVD) process. The effects of R
                      ratio on the material's composition, crystallinity, surface
                      passivation, and contact resistivity are investigated. The
                      poly-SiN x contact exhibits improved surface passivation in
                      comparison with the reference poly-Si without N
                      incorporation. The best double-sided passivated n-type
                      alkaline-polished crystalline silicon wafer with the
                      n-poly-SiN x /SiO x manifests the highest implied
                      open-circuit voltage (iV oc) of ≈745 mV, with the
                      corresponding single-sided saturated current density of
                      1.7 fA cm−2 and the effective lifetime (τ eff) of
                      10 ms at the injection level of ≈1 × 1015 cm−3.
                      In contrast, the controlled sample with an n-poly-Si/SiO x
                      passivation contact has a maximal iV oc of 738 mV.
                      However, the primary drawback of the N doping is to raise
                      the contact resistivity, but which is still in an acceptable
                      range and shows little effect on the performance of solar
                      cell with full-area contact. The proof-of-concept TOPCon
                      solar cell using the n-poly-SiN x /SiO x passivating contact
                      has achieved an efficiency of $23.88\%,$ indicating the
                      potential of the n-poly-SiN x for high-efficiency TOPCon
                      solar cells.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000697207000001},
      doi          = {10.1002/solr.202100644},
      url          = {https://juser.fz-juelich.de/record/904121},
}