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| 100 | 1 | _ | |a Yang, Qing |0 P:(DE-Juel1)188101 |b 0 |u fzj |
| 245 | _ | _ | |a Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells |
| 260 | _ | _ | |a Weinheim |c 2021 |b Wiley-VCH |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a A P-doped polycrystalline silicon-nitride (n-poly-SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN x /SiO x manifests the highest implied open-circuit voltage (iV oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n-poly-Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN x for high-efficiency TOPCon solar cells. |
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| 700 | 1 | _ | |a Liu, Zunke |b 1 |
| 700 | 1 | _ | |a Lin, Yiran |b 2 |
| 700 | 1 | _ | |a Liu, Wei |b 3 |
| 700 | 1 | _ | |a Liao, Mingdun |b 4 |
| 700 | 1 | _ | |a Feng, Mengmeng |b 5 |
| 700 | 1 | _ | |a Zhi, Yuyan |b 6 |
| 700 | 1 | _ | |a Zheng, Jingming |b 7 |
| 700 | 1 | _ | |a Lu, Linna |b 8 |
| 700 | 1 | _ | |a Ma, Dian |b 9 |
| 700 | 1 | _ | |a Han, Qingling |b 10 |
| 700 | 1 | _ | |a Cheng, Hao |b 11 |
| 700 | 1 | _ | |a Yang, Zhenhai |b 12 |
| 700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 13 |
| 700 | 1 | _ | |a Duan, Weiyuan |0 P:(DE-Juel1)169946 |b 14 |
| 700 | 1 | _ | |a Chen, Hui |b 15 |
| 700 | 1 | _ | |a Wang, Yuming |b 16 |
| 700 | 1 | _ | |a Zeng, Yuheng |0 0000-0002-0193-9971 |b 17 |
| 700 | 1 | _ | |a Yan, Baojie |b 18 |
| 700 | 1 | _ | |a Ye, Jichun |0 P:(DE-HGF)0 |b 19 |e Corresponding author |
| 773 | _ | _ | |a 10.1002/solr.202100644 |g Vol. 5, no. 11, p. 2100644 - |0 PERI:(DE-600)2882014-9 |n 11 |p 2100644 - |t Solar RRL |v 5 |y 2021 |x 2367-198X |
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