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@ARTICLE{Banszerus:904597,
      author       = {Banszerus, L. and Rothstein, A. and Icking, E. and Möller,
                      S. and Watanabe, K. and Taniguchi, T. and Stampfer, C. and
                      Volk, Christian},
      title        = {{T}unable interdot coupling in few-electron bilayer
                      graphene double quantum dots},
      journal      = {Applied physics letters},
      volume       = {118},
      number       = {10},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2021-06167},
      pages        = {103101 -},
      year         = {2021},
      abstract     = {We present a highly controllable double quantum dot device
                      based on bilayer graphene. Using a device architecture of
                      interdigitated gate fingers, we can control the interdot
                      tunnel coupling between 1 and 4 GHz and the mutual
                      capacitive coupling between 0.2 and 0.6 meV, independent
                      of the charge occupation of the quantum dots. The charging
                      energy and, hence, the dot size remain nearly unchanged. The
                      tuning range of the tunnel coupling covers the operating
                      regime of typical silicon and GaAs spin qubit devices.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5222 - Exploratory Qubits (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5222},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000630486600001},
      doi          = {10.1063/5.0035300},
      url          = {https://juser.fz-juelich.de/record/904597},
}