Journal Article

FZJ-2021-06167

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tunable interdot coupling in few-electron bilayer graphene double quantum dots

Banszerus, L. (Corresponding author) ; Rothstein, A.RWTH* ; Icking, E.FZJ* ; Möller, S.RWTH* ; Watanabe, K. ; Taniguchi, T. ; Stampfer, C.FZJ* ; Volk, C.FZJ*

2021
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/30073  doi:10.1063/5.0035300

Abstract: We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 and 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independent of the charge occupation of the quantum dots. The charging energy and, hence, the dot size remain nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5222 - Exploratory Qubits (POF4-522) (POF4-522)

Appears in the scientific report 2021

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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