Contribution to a conference proceedings/Journal Article FZJ-2022-00031

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Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power

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2021
IEEE

2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 20212021-05-222021-05-28 Tuning the Memory Window of TaOx ReRAM using the RF Sputtering Power 978-1-7281, 978-1-7281-9201 () [10.1109/ISCAS51556.2021.9401584]

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Contributing Institute(s):
  1. JARA Institut Green IT (PGI-10)
Research Program(s):
  1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

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 Record created 2022-01-03, last modified 2025-01-06


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