%0 Journal Article
%A Wu, Ming
%A Jiang, Zhizheng
%A Lou, Xiaojie
%A Zhang, Fan
%A Song, Dongsheng
%A Ning, Shoucong
%A Guo, Mengyao
%A Pennycook, Stephen J.
%A Dai, Ji-yan
%A Wen, Zheng
%T Flexoelectric Thin-Film Photodetectors
%J Nano letters
%V 21
%N 7
%@ 1530-6984
%C Washington, DC
%I ACS Publ.
%M FZJ-2022-00260
%P 2946 - 2952
%D 2021
%X The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film heterostructure. This prototypical device is demonstrated by epitaxial LaFeO3 thin films grown on LaAlO3 substrates. A giant strain gradient of the order of 106/m is achieved in LaFeO3 thin films, giving rise to an obvious flexoelectric polarization and generating a significant photovoltaic effect in the LaFeO3-based heterostructures with nanosecond response under light illumination. This work not only demonstrates a novel self-powered photodetector different from the traditional interface-type structures, such as the p–n and Schottky junctions but also opens an avenue to design practical flexoelectric devices for nanoelectronics applications.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:33759536
%U <Go to ISI:>//WOS:000641160500034
%R 10.1021/acs.nanolett.1c00055
%U https://juser.fz-juelich.de/record/904946