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Journal Article | FZJ-2022-00260 |
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2021
ACS Publ.
Washington, DC
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Please use a persistent id in citations: http://hdl.handle.net/2128/30672 doi:10.1021/acs.nanolett.1c00055
Abstract: The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film heterostructure. This prototypical device is demonstrated by epitaxial LaFeO3 thin films grown on LaAlO3 substrates. A giant strain gradient of the order of 106/m is achieved in LaFeO3 thin films, giving rise to an obvious flexoelectric polarization and generating a significant photovoltaic effect in the LaFeO3-based heterostructures with nanosecond response under light illumination. This work not only demonstrates a novel self-powered photodetector different from the traditional interface-type structures, such as the p–n and Schottky junctions but also opens an avenue to design practical flexoelectric devices for nanoelectronics applications.
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