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@ARTICLE{Wu:904946,
author = {Wu, Ming and Jiang, Zhizheng and Lou, Xiaojie and Zhang,
Fan and Song, Dongsheng and Ning, Shoucong and Guo, Mengyao
and Pennycook, Stephen J. and Dai, Ji-yan and Wen, Zheng},
title = {{F}lexoelectric {T}hin-{F}ilm {P}hotodetectors},
journal = {Nano letters},
volume = {21},
number = {7},
issn = {1530-6984},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2022-00260},
pages = {2946 - 2952},
year = {2021},
abstract = {The flexoelectric effect, which manifests itself as a
strain-gradient-induced electrical polarization, has
triggered great interest due to its ubiquitous existence in
crystalline materials without the limitation of lattice
symmetry. Here, we propose a flexoelectric photodetector
based on a thin-film heterostructure. This prototypical
device is demonstrated by epitaxial LaFeO3 thin films grown
on LaAlO3 substrates. A giant strain gradient of the order
of 106/m is achieved in LaFeO3 thin films, giving rise to an
obvious flexoelectric polarization and generating a
significant photovoltaic effect in the LaFeO3-based
heterostructures with nanosecond response under light
illumination. This work not only demonstrates a novel
self-powered photodetector different from the traditional
interface-type structures, such as the p–n and Schottky
junctions but also opens an avenue to design practical
flexoelectric devices for nanoelectronics applications.},
cin = {ER-C-1},
ddc = {660},
cid = {I:(DE-Juel1)ER-C-1-20170209},
pnm = {5351 - Platform for Correlative, In Situ and Operando
Characterization (POF4-535)},
pid = {G:(DE-HGF)POF4-5351},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:33759536},
UT = {WOS:000641160500034},
doi = {10.1021/acs.nanolett.1c00055},
url = {https://juser.fz-juelich.de/record/904946},
}