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@ARTICLE{Chime:905119,
      author       = {Chime, Ugochi and Wolf, Leon and Buga, Viktoriia and
                      Weigand, Daniel and Gad, Alaaeldin and Köhler, Julian and
                      Lambertz, Andreas and Duan, Weiyuan and Ding, Kaining and
                      Merdzhanova, Tsvetelina and Rau, Uwe and Astakhov,
                      Oleksandr},
      title        = {{H}ow {T}hin {P}ractical {S}ilicon {H}eterojunction {S}olar
                      {C}ells {C}ould {B}e? {E}xperimental {S}tudy under 1 {S}un
                      and under {I}ndoor {I}llumination},
      journal      = {Solar RRL},
      volume       = {6},
      number       = {1},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-00411},
      pages        = {2100594 -},
      year         = {2022},
      abstract     = {The transition toward thinner microcrystalline silicon
                      wafers for their potential performance gain has been of
                      interest in recent years. Theoretical predictions have
                      estimated a maximum efficiency for silicon wafers to be at
                      about 100−110 μm thickness. The potential and losses in
                      silicon heterojunction solar cells prepared on wafers with
                      thickness in the range of 60−170 μm with focus on
                      open-circuit voltage (V OC) and fill factor (FF) are studied
                      experimentally. The applicability of thinner wafers for low
                      light and indoor applications using light emitting diode
                      (LED) lighting is also studied. The implied V OC (iV OC) is
                      observed to increase with a decrease in wafer thickness
                      according to theoretical predictions with absolute values
                      approaching the theoretical limit. Unlike the iV OC, the
                      implied FF is observed to decrease with wafer thickness
                      reduction opposite to the theoretical predictions which are
                      related to the effect of surface recombination. A
                      combination of gains and losses results in a broad range of
                      high efficiency under 1 sun for wafer thicknesses ranging
                      from 75 to 170 μm with maximum of $22.3\%$ obtained at
                      75 μm. As for indoor performance, thinner wafers show
                      slightly better efficiency at lower light intensity under
                      sun and LED illumination, promising improved performance for
                      even thinner devices.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000694976100001},
      doi          = {10.1002/solr.202100594},
      url          = {https://juser.fz-juelich.de/record/905119},
}