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@INPROCEEDINGS{Heisig:905898,
      author       = {Heisig, Thomas and Langen, Karl-Josef and Gutsche,
                      Alexander and Goß, Kalle and Hambsch, Sebastian and
                      Locatelly, A. and Mentes, T. O. and Genuzio, F. and Menzel,
                      Stephan and Dittmann, Regina},
      title        = {{C}hemical structure of conductive filaments in tantalum
                      oxide memristive devices and its implications for the
                      formation mechanism},
      reportid     = {FZJ-2022-01097},
      year         = {2021},
      month         = {Dec},
      date          = {2021-12-06},
      organization  = {ICAMD, Jeju Island (South Korea), 6
                       Dec 2021 - 10 Dec 2021},
      subtyp        = {Invited},
      cin          = {PGI-7 / JARA-FIT / INM-4 / PGI-10},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)INM-4-20090406 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / MANIC - Materials for Neuromorphic Circuits
                      (861153)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K /
                      G:(EU-Grant)861153},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/905898},
}