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@ARTICLE{Zhang:906234,
      author       = {Zhang, Kaicheng and Forberich, Karen and Lüer, Larry and
                      Cerrillo, José Garcia and Meng, Wei and Du, Xiaoyan and Le
                      Corre, Vincent M. and Zhao, Yicheng and Niu, Tianqi and Xue,
                      Qifan and Koster, Michael and Li, Ning and Brabec,
                      Christoph},
      title        = {{U}nderstanding the {L}imitations of {C}harge
                      {T}ransporting {L}ayers in {M}ixed {L}ead–{T}in {H}alide
                      {P}erovskite {S}olar {C}ells},
      journal      = {Advanced energy $\&$ sustainability research},
      volume       = {3},
      number       = {3},
      issn         = {2699-9412},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-01312},
      pages        = {2100156},
      year         = {2022},
      abstract     = {Lead–tin (Pb/Sn) mixed perovskites are considered as
                      promising photovoltaic materials owing to their adjustable
                      bandgap and excellent optoelectronic properties. The
                      low-bandgap perovskite solar cells (PSCs) based on
                      lead–tin mixed perovskites play a critical role in the
                      overall performance of perovskite-based tandem devices.
                      Nevertheless, the current record efficiencies for Pb/Sn PSCs
                      are mostly reported in devices with p–i–n configuration
                      rather than n–i–p, which restricts the further
                      development of conventional perovskite-based tandem solar
                      cells. Herein, this work systematically investigates the
                      influence of the interlayers on the performance of
                      low-bandgap PSCs by analyzing the energy losses in both
                      n–i–p and p–i–n devices. Quasi-Fermi level splitting
                      (QFLS) analysis of pristine films and films covering charge
                      extraction layers reveals that the electron transport
                      layer/perovskite interface is dominating the VOC losses. A
                      joint experimental–simulative approach quantitatively
                      determines the interface defect density to be more than one
                      order in magnitude larger for the n–i–p architecture.
                      Among the polymeric hole transport layers investigated for
                      n–i–p devices, poly(3-hexylthiophen-2,5-diyl) (P3HT)
                      exhibits the most favorable energy-level alignment to Pb/Sn
                      perovskites. These results clarify the nature of VOC losses
                      in Pb/Sn perovskites and highlight the necessity to develop
                      electron extraction layers with a significantly reduced
                      interface defect density.},
      cin          = {IEK-11},
      ddc          = {333.7},
      cid          = {I:(DE-Juel1)IEK-11-20140314},
      pnm          = {1212 - Materials and Interfaces (POF4-121) / 1213 - Cell
                      Design and Development (POF4-121) / 1214 - Modules,
                      stability, performance and specific applications (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212 / G:(DE-HGF)POF4-1213 /
                      G:(DE-HGF)POF4-1214},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000844229900005},
      doi          = {10.1002/aesr.202100156},
      url          = {https://juser.fz-juelich.de/record/906234},
}