% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Zhang:906234,
author = {Zhang, Kaicheng and Forberich, Karen and Lüer, Larry and
Cerrillo, José Garcia and Meng, Wei and Du, Xiaoyan and Le
Corre, Vincent M. and Zhao, Yicheng and Niu, Tianqi and Xue,
Qifan and Koster, Michael and Li, Ning and Brabec,
Christoph},
title = {{U}nderstanding the {L}imitations of {C}harge
{T}ransporting {L}ayers in {M}ixed {L}ead–{T}in {H}alide
{P}erovskite {S}olar {C}ells},
journal = {Advanced energy $\&$ sustainability research},
volume = {3},
number = {3},
issn = {2699-9412},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2022-01312},
pages = {2100156},
year = {2022},
abstract = {Lead–tin (Pb/Sn) mixed perovskites are considered as
promising photovoltaic materials owing to their adjustable
bandgap and excellent optoelectronic properties. The
low-bandgap perovskite solar cells (PSCs) based on
lead–tin mixed perovskites play a critical role in the
overall performance of perovskite-based tandem devices.
Nevertheless, the current record efficiencies for Pb/Sn PSCs
are mostly reported in devices with p–i–n configuration
rather than n–i–p, which restricts the further
development of conventional perovskite-based tandem solar
cells. Herein, this work systematically investigates the
influence of the interlayers on the performance of
low-bandgap PSCs by analyzing the energy losses in both
n–i–p and p–i–n devices. Quasi-Fermi level splitting
(QFLS) analysis of pristine films and films covering charge
extraction layers reveals that the electron transport
layer/perovskite interface is dominating the VOC losses. A
joint experimental–simulative approach quantitatively
determines the interface defect density to be more than one
order in magnitude larger for the n–i–p architecture.
Among the polymeric hole transport layers investigated for
n–i–p devices, poly(3-hexylthiophen-2,5-diyl) (P3HT)
exhibits the most favorable energy-level alignment to Pb/Sn
perovskites. These results clarify the nature of VOC losses
in Pb/Sn perovskites and highlight the necessity to develop
electron extraction layers with a significantly reduced
interface defect density.},
cin = {IEK-11},
ddc = {333.7},
cid = {I:(DE-Juel1)IEK-11-20140314},
pnm = {1212 - Materials and Interfaces (POF4-121) / 1213 - Cell
Design and Development (POF4-121) / 1214 - Modules,
stability, performance and specific applications (POF4-121)},
pid = {G:(DE-HGF)POF4-1212 / G:(DE-HGF)POF4-1213 /
G:(DE-HGF)POF4-1214},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000844229900005},
doi = {10.1002/aesr.202100156},
url = {https://juser.fz-juelich.de/record/906234},
}