TY  - JOUR
AU  - Perla, Pujitha
AU  - Faustmann, Anton
AU  - Kölling, Sebastian
AU  - Zellekens, Patrick
AU  - Deacon, Russell
AU  - Aruni Fonseka, H.
AU  - Kölzer, Jonas
AU  - Sato, Yuki
AU  - Sanchez, Ana M.
AU  - Moutanabbir, Oussama
AU  - Ishibashi, Koji
AU  - Grützmacher, Detlev
AU  - Lepsa, Mihail Ion
AU  - Schäpers, Thomas
TI  - Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
JO  - Physical review materials
VL  - 6
IS  - 2
SN  - 2475-9953
CY  - College Park, MD
PB  - APS
M1  - FZJ-2022-01697
SP  - 024602
PY  - 2022
AB  - Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been modified byn-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined withatomic probe tomography to obtain information about the local incorporation of Te atoms. It was found thatthe Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. Theefficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, aJosephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed aclear increase of the critical current with increase of the dopant concentration.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000766666500002
DO  - DOI:10.1103/PhysRevMaterials.6.024602
UR  - https://juser.fz-juelich.de/record/906796
ER  -