Journal Article FZJ-2022-01697

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Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

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2022
APS College Park, MD

Physical review materials 6(2), 024602 () [10.1103/PhysRevMaterials.6.024602]

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Abstract: Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been modified byn-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined withatomic probe tomography to obtain information about the local incorporation of Te atoms. It was found thatthe Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. Theefficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, aJosephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed aclear increase of the critical current with increase of the dopant concentration.

Keyword(s): Information and Communication (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA Institut Green IT (PGI-10)
Research Program(s):
  1. 5222 - Exploratory Qubits (POF4-522) (POF4-522)

Appears in the scientific report 2022
Database coverage:
Medline ; American Physical Society Transfer of Copyright Agreement ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2022-03-21, last modified 2023-01-23


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