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@ARTICLE{Perla:906796,
      author       = {Perla, Pujitha and Faustmann, Anton and Kölling, Sebastian
                      and Zellekens, Patrick and Deacon, Russell and Aruni
                      Fonseka, H. and Kölzer, Jonas and Sato, Yuki and Sanchez,
                      Ana M. and Moutanabbir, Oussama and Ishibashi, Koji and
                      Grützmacher, Detlev and Lepsa, Mihail Ion and Schäpers,
                      Thomas},
      title        = {{T}e-doped selective-area grown {I}n{A}s nanowires for
                      superconducting hybrid devices},
      journal      = {Physical review materials},
      volume       = {6},
      number       = {2},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2022-01697},
      pages        = {024602},
      year         = {2022},
      abstract     = {Semiconductor nanowires have emerged as versatile
                      components in superconducting hybrid devices forMajorana
                      physics and quantum computing. The transport properties of
                      nanowires can be tuned either by fieldeffect or doping. We
                      investigated a series of InAs nanowires the conductivity of
                      which has been modified byn-type doping using tellurium. In
                      addition to electron microscopy studies, the wires were also
                      examined withatomic probe tomography to obtain information
                      about the local incorporation of Te atoms. It was found
                      thatthe Te atoms mainly accumulate in the core of the
                      nanowire and at the corners of the {110} side facets.
                      Theefficiency of n-type doping was also confirmed by
                      transport measurements. As a demonstrator hybrid device,
                      aJosephson junction was fabricated using a nanowire as a
                      weak link. The corresponding measurements showed aclear
                      increase of the critical current with increase of the dopant
                      concentration.},
      cin          = {PGI-9 / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5222 - Exploratory Qubits (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5222},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000766666500002},
      doi          = {10.1103/PhysRevMaterials.6.024602},
      url          = {https://juser.fz-juelich.de/record/906796},
}