%0 Journal Article
%A Lin, You-Ron
%A Franke, Markus
%A Parhizkar, Shayan
%A Raths, Miriam
%A Wen-zhe Yu, Victor
%A Lee, Tien-Lin
%A Soubatch, Serguei
%A Blum, Volker
%A Tautz, F. Stefan
%A Kumpf, Christian
%A Bocquet, François C.
%T Boron nitride on SiC(0001)
%J Physical review materials
%V 6
%N 6
%@ 2475-9953
%C College Park, MD
%I APS
%M FZJ-2022-02353
%P 064002
%D 2022
%X In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal BxNy layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0∘ orientation of the BxNy template layer upon annealing.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000809873200002
%R 10.1103/PhysRevMaterials.6.064002
%U https://juser.fz-juelich.de/record/908066