Journal Article FZJ-2022-02353

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Boron nitride on SiC(0001)

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2022
APS College Park, MD

Physical review materials 6(6), 064002 () [10.1103/PhysRevMaterials.6.064002]

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Abstract: In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal BxNy layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0∘ orientation of the BxNy template layer upon annealing.

Classification:

Contributing Institute(s):
  1. Quantum Nanoscience (PGI-3)
Research Program(s):
  1. 5213 - Quantum Nanoscience (POF4-521) (POF4-521)
  2. DFG project 396769409 - Grundlagen der Photoemissionstomographie (396769409)

Appears in the scientific report 2022
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Medline ; American Physical Society Transfer of Copyright Agreement ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2022-06-10, last modified 2023-08-15


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