TY  - JOUR
AU  - Lin, You-Ron
AU  - Franke, Markus
AU  - Parhizkar, Shayan
AU  - Raths, Miriam
AU  - Wen-zhe Yu, Victor
AU  - Lee, Tien-Lin
AU  - Soubatch, Serguei
AU  - Blum, Volker
AU  - Tautz, F. Stefan
AU  - Kumpf, Christian
AU  - Bocquet, François C.
TI  - Boron nitride on SiC(0001)
JO  - Physical review materials
VL  - 6
IS  - 6
SN  - 2475-9953
CY  - College Park, MD
PB  - APS
M1  - FZJ-2022-02353
SP  - 064002
PY  - 2022
AB  - In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal BxNy layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0∘ orientation of the BxNy template layer upon annealing.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000809873200002
DO  - DOI:10.1103/PhysRevMaterials.6.064002
UR  - https://juser.fz-juelich.de/record/908066
ER  -