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@ARTICLE{Lin:908066,
      author       = {Lin, You-Ron and Franke, Markus and Parhizkar, Shayan and
                      Raths, Miriam and Wen-zhe Yu, Victor and Lee, Tien-Lin and
                      Soubatch, Serguei and Blum, Volker and Tautz, F. Stefan and
                      Kumpf, Christian and Bocquet, François C.},
      title        = {{B}oron nitride on {S}i{C}(0001)},
      journal      = {Physical review materials},
      volume       = {6},
      number       = {6},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2022-02353},
      pages        = {064002},
      year         = {2022},
      abstract     = {In the field of van der Waals heterostructures, the twist
                      angle between stacked two-dimensional layers has been
                      identified to be of utmost importance for the properties of
                      the heterostructures. In this context, we previously
                      reported the growth of a single layer of unconventionally
                      oriented epitaxial graphene that forms in a surfactant
                      atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125,
                      106102 (2020)]. The resulting G-R0∘ layer is aligned with
                      the SiC lattice, and hence represents an important milestone
                      towards high-quality twisted bilayer graphene, a frequently
                      investigated model system in this field. Here, we focus on
                      the surface structures obtained in the same surfactant
                      atmosphere, but at lower preparation temperatures at which a
                      boron nitride template layer forms on SiC(0001). In a
                      comprehensive study based on complementary experimental and
                      theoretical techniques, we find—in contrast to the
                      literature—that this template layer is a hexagonal BxNy
                      layer, but not high-quality hBN. It is aligned with the SiC
                      lattice and gradually replaced by low-quality graphene in
                      the 0∘ orientation of the BxNy template layer upon
                      annealing.},
      cin          = {PGI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521) / DFG project
                      396769409 - Grundlagen der Photoemissionstomographie},
      pid          = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)396769409},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000809873200002},
      doi          = {10.1103/PhysRevMaterials.6.064002},
      url          = {https://juser.fz-juelich.de/record/908066},
}