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024 7 _ |a 10.1103/PhysRevMaterials.6.064002
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100 1 _ |a Lin, You-Ron
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245 _ _ |a Boron nitride on SiC(0001)
260 _ _ |a College Park, MD
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520 _ _ |a In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal BxNy layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0∘ orientation of the BxNy template layer upon annealing.
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700 1 _ |a Franke, Markus
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700 1 _ |a Parhizkar, Shayan
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700 1 _ |a Raths, Miriam
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700 1 _ |a Wen-zhe Yu, Victor
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700 1 _ |a Lee, Tien-Lin
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700 1 _ |a Soubatch, Serguei
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700 1 _ |a Blum, Volker
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700 1 _ |a Tautz, F. Stefan
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700 1 _ |a Kumpf, Christian
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700 1 _ |a Bocquet, François C.
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773 _ _ |a 10.1103/PhysRevMaterials.6.064002
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856 4 _ |u https://juser.fz-juelich.de/record/908066/files/PhysRevMaterials.6.064002.pdf
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