000908590 001__ 908590
000908590 005__ 20230123110631.0
000908590 0247_ $$2doi$$a10.4028/p-y8n42h
000908590 0247_ $$2ISSN$$a0255-5476
000908590 0247_ $$2ISSN$$a1662-9752
000908590 0247_ $$2ISSN$$a1662-9760
000908590 0247_ $$2Handle$$a2128/33539
000908590 037__ $$aFZJ-2022-02706
000908590 082__ $$a670
000908590 1001_ $$00000-0002-6686-7964$$aSteiner, Johannes$$b0$$eCorresponding author
000908590 245__ $$aApplicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
000908590 260__ $$aUetikon$$bTrans Tech Publ.$$c2022
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000908590 3367_ $$00$$2EndNote$$aJournal Article
000908590 520__ $$aAbstract:Screw-type dislocations like micropipes (MP) and threading screw dislocations (TSD) are prohibiting the function or at least diminishing the efficiency of electronic devices based on silicon carbide (SiC). Therefore, it is essential to characterize wafers in an efficient and fast manner. Molten potassium hydroxide (KOH) etching or white-beam X-ray topography (SWXRT) are either destructive or not economically viable for an in-depth characterization of every wafer of one SiC crystal. Birefringence microscopy is being utilized as a fast and non-destructive characterization method. Instead of microscopic setups, commercially available flat-bed scanners equipped with crossed polarizer foils can be used for fast large-area scans. This work investigates the feasibility of such a setup regarding the detection rate of MPs and TSDs. The results of a full-wafer mapping are compared with birefringence microscopy and KOH etching. In the investigated sample clusters of MPs caused by a polytype switch in the beginning of the growth could be identified by both birefringence microscopy and the flat-bed scanner setup, as well as small angle grain boundaries and TED arrays. However, the resolution of the scanner was not sufficient to identify TSDs. Nevertheless the setup proves to be an easy-to-setup and cheap characterization method, able to quickly identify defect clusters in 4H-SiC wafers.
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000908590 588__ $$aDataset connected to CrossRef, Journals: juser.fz-juelich.de
000908590 7001_ $$0P:(DE-Juel1)187067$$aNguyen, Binh Duong$$b1$$ufzj
000908590 7001_ $$aRoder, Melissa$$b2
000908590 7001_ $$aDanilewsky, Andreas N.$$b3
000908590 7001_ $$0P:(DE-Juel1)186075$$aSandfeld, Stefan$$b4$$ufzj
000908590 7001_ $$aWellmann, Peter J.$$b5
000908590 773__ $$0PERI:(DE-600)2047372-2$$a10.4028/p-y8n42h$$gVol. 1062, p. 113 - 118$$p113 - 118$$tMaterials science forum$$v1062$$x0255-5476$$y2022
000908590 8564_ $$uhttps://juser.fz-juelich.de/record/908590/files/3_MSF.1062.113.pdf$$yOpenAccess
000908590 8564_ $$uhttps://juser.fz-juelich.de/record/908590/files/MSF.1062.113.pdf$$yOpenAccess
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000908590 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)186075$$aForschungszentrum Jülich$$b4$$kFZJ
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000908590 9141_ $$y2022
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