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@ARTICLE{Steiner:908590,
      author       = {Steiner, Johannes and Nguyen, Binh Duong and Roder, Melissa
                      and Danilewsky, Andreas N. and Sandfeld, Stefan and
                      Wellmann, Peter J.},
      title        = {{A}pplicability of a {F}lat-{B}ed {B}irefringence {S}etup
                      for the {D}etermination of {T}hreading {D}islocations of
                      {S}ilicon {C}arbide {W}afers},
      journal      = {Materials science forum},
      volume       = {1062},
      issn         = {0255-5476},
      address      = {Uetikon},
      publisher    = {Trans Tech Publ.},
      reportid     = {FZJ-2022-02706},
      pages        = {113 - 118},
      year         = {2022},
      abstract     = {Abstract:Screw-type dislocations like micropipes (MP) and
                      threading screw dislocations (TSD) are prohibiting the
                      function or at least diminishing the efficiency of
                      electronic devices based on silicon carbide (SiC).
                      Therefore, it is essential to characterize wafers in an
                      efficient and fast manner. Molten potassium hydroxide (KOH)
                      etching or white-beam X-ray topography (SWXRT) are either
                      destructive or not economically viable for an in-depth
                      characterization of every wafer of one SiC crystal.
                      Birefringence microscopy is being utilized as a fast and
                      non-destructive characterization method. Instead of
                      microscopic setups, commercially available flat-bed scanners
                      equipped with crossed polarizer foils can be used for fast
                      large-area scans. This work investigates the feasibility of
                      such a setup regarding the detection rate of MPs and TSDs.
                      The results of a full-wafer mapping are compared with
                      birefringence microscopy and KOH etching. In the
                      investigated sample clusters of MPs caused by a polytype
                      switch in the beginning of the growth could be identified by
                      both birefringence microscopy and the flat-bed scanner
                      setup, as well as small angle grain boundaries and TED
                      arrays. However, the resolution of the scanner was not
                      sufficient to identify TSDs. Nevertheless the setup proves
                      to be an easy-to-setup and cheap characterization method,
                      able to quickly identify defect clusters in 4H-SiC wafers.},
      cin          = {IAS-9},
      ddc          = {670},
      cid          = {I:(DE-Juel1)IAS-9-20201008},
      pnm          = {5111 - Domain-Specific Simulation $\&$ Data Life Cycle Labs
                      (SDLs) and Research Groups (POF4-511)},
      pid          = {G:(DE-HGF)POF4-5111},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.4028/p-y8n42h},
      url          = {https://juser.fz-juelich.de/record/908590},
}