TY  - JOUR
AU  - Mulder, Liesbeth
AU  - Wielens, Daan H.
AU  - Birkhölzer, Yorick A.
AU  - Brinkman, Alexander
AU  - Concepción Diaz, Omar
TI  - Revisiting the van der Waals Epitaxy in the Case of (Bi0.4Sb0.6)2Te3 Thin Films on Dissimilar Substrates
JO  - Nanomaterials
VL  - 12
IS  - 11
SN  - 2079-4991
CY  - Basel
PB  - MDPI
M1  - FZJ-2022-02888
SP  - 1790 -
PY  - 2022
AB  - Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that the influence of the substrate is substantial and governs the formation of defects, mosaicity, and twin domains. For this comparative study, InP (111)A, Al2O3 (001), and SrTiO3 (111) substrates were selected. While the films deposited on lattice-matched InP (111)A show van der Waals epitaxial relations, our results point to a quasi-van der Waals epitaxy for the films grown on substrates with a larger lattice mismatch.
LB  - PUB:(DE-HGF)16
C6  - 35683648
UR  - <Go to ISI:>//WOS:000808825800001
DO  - DOI:10.3390/nano12111790
UR  - https://juser.fz-juelich.de/record/908874
ER  -