Journal Article

FZJ-2022-02888

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Revisiting the van der Waals Epitaxy in the Case of (Bi0.4Sb0.6)2Te3 Thin Films on Dissimilar Substrates

Mulder, L. ; Wielens, D. H. ; Birkhölzer, Y. A. ; Brinkman, A. ; Concepción Diaz, O. (Corresponding author)FZJ*

2022
MDPI Basel

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Please use a persistent id in citations: http://hdl.handle.net/2128/31638  doi:10.3390/nano12111790

Abstract: Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that the influence of the substrate is substantial and governs the formation of defects, mosaicity, and twin domains. For this comparative study, InP (111)A, Al2O3 (001), and SrTiO3 (111) substrates were selected. While the films deposited on lattice-matched InP (111)A show van der Waals epitaxial relations, our results point to a quasi-van der Waals epitaxy for the films grown on substrates with a larger lattice mismatch.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5224 - Quantum Networking (POF4-522) (POF4-522)

Appears in the scientific report 2022

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