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| Home > Publications database > In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices > Access to Fulltext |
| Home > Publications database > In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices > Access to Fulltext |
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Invoice-APC600354747
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Invoice-APC600354754
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