%0 Journal Article
%A Han, Yi
%A Xi, Fengben
%A Allibert, Frederic
%A Radu, Ionut
%A Prucnal, Slawomir
%A Bae, Jin-Hee
%A Hoffmann-Eifert, Susanne
%A Knoch, Joachim
%A Grützmacher, Detlev
%A Zhao, Qing-Tai
%T Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
%J Solid state electronics
%V 192
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M FZJ-2022-04211
%P 108263 -
%D 2022
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000788843300003
%R 10.1016/j.sse.2022.108263
%U https://juser.fz-juelich.de/record/910861