Journal Article

FZJ-2022-04211

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures

Han, Y.FZJ* ; Xi, F.FZJ* ; Allibert, F. ; Radu, I. ; Prucnal, S. ; Bae, J.-H.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Knoch, J. ; Grützmacher, D.FZJ* ; Zhao, Q.-T.FZJ*

2022
Pergamon, Elsevier Science Oxford [u.a.]

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/32603  doi:10.1016/j.sse.2022.108263

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876)

Appears in the scientific report 2022

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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