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@ARTICLE{Han:910861,
      author       = {Han, Yi and Xi, Fengben and Allibert, Frederic and Radu,
                      Ionut and Prucnal, Slawomir and Bae, Jin-Hee and
                      Hoffmann-Eifert, Susanne and Knoch, Joachim and
                      Grützmacher, Detlev and Zhao, Qing-Tai},
      title        = {{C}haracterization of fully silicided source/drain {SOI}
                      {UTBB} n{MOSFET}s at cryogenic temperatures},
      journal      = {Solid state electronics},
      volume       = {192},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2022-04211},
      pages        = {108263 -},
      year         = {2022},
      cin          = {PGI-9 / JARA-FIT / PGI-10},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      422581876 - Kryogene CMOS Technologie für die Realisierung
                      von von klassischen QuBit-Kontrollschaltkreisen},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000788843300003},
      doi          = {10.1016/j.sse.2022.108263},
      url          = {https://juser.fz-juelich.de/record/910861},
}