%0 Journal Article
%A Han, Yi
%A Sun, Jingxuan
%A Richstein, Benjamin
%A Allibert, Frederic
%A Radu, Ionut
%A Bae, Jin-Hee
%A Grutzmacher, Detlev
%A Knoch, Joachim
%A Zhao, Qing-Tai
%T Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
%J IEEE electron device letters
%V 43
%N 8
%@ 0741-3106
%C New York, NY
%I IEEE
%M FZJ-2022-04493
%P 1187 - 1190
%D 2022
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000831160000012
%R 10.1109/LED.2022.3185781
%U https://juser.fz-juelich.de/record/911181