Journal Article

FZJ-2022-04493

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

Han, Y.FZJ* ; Sun, J.FZJ* ; Richstein, B. ; Allibert, F. ; Radu, I. ; Bae, J.-H.FZJ* ; Grutzmacher, D.FZJ* ; Knoch, J.RWTH* ; Zhao, Q.-T.FZJ*

2022
IEEE New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/32720  doi:10.1109/LED.2022.3185781

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876)

Appears in the scientific report 2022

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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