TY  - JOUR
AU  - Han, Yi
AU  - Sun, Jingxuan
AU  - Richstein, Benjamin
AU  - Allibert, Frederic
AU  - Radu, Ionut
AU  - Bae, Jin-Hee
AU  - Grutzmacher, Detlev
AU  - Knoch, Joachim
AU  - Zhao, Qing-Tai
TI  - Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
JO  - IEEE electron device letters
VL  - 43
IS  - 8
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2022-04493
SP  - 1187 - 1190
PY  - 2022
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000831160000012
DO  - DOI:10.1109/LED.2022.3185781
UR  - https://juser.fz-juelich.de/record/911181
ER  -