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@ARTICLE{Han:911181,
      author       = {Han, Yi and Sun, Jingxuan and Richstein, Benjamin and
                      Allibert, Frederic and Radu, Ionut and Bae, Jin-Hee and
                      Grutzmacher, Detlev and Knoch, Joachim and Zhao, Qing-Tai},
      title        = {{S}teep {S}witching {S}i {N}anowire p-{FET}s {W}ith
                      {D}opant {S}egregated {S}ilicide {S}ource/{D}rain at
                      {C}ryogenic {T}emperature},
      journal      = {IEEE electron device letters},
      volume       = {43},
      number       = {8},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2022-04493},
      pages        = {1187 - 1190},
      year         = {2022},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      422581876 - Kryogene CMOS Technologie für die Realisierung
                      von von klassischen QuBit-Kontrollschaltkreisen},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000831160000012},
      doi          = {10.1109/LED.2022.3185781},
      url          = {https://juser.fz-juelich.de/record/911181},
}