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| 001 | 911181 | ||
| 005 | 20230522110532.0 | ||
| 024 | 7 | _ | |a 10.1109/LED.2022.3185781 |2 doi |
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| 245 | _ | _ | |a Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature |
| 260 | _ | _ | |a New York, NY |c 2022 |b IEEE |
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| 700 | 1 | _ | |a Sun, Jingxuan |0 P:(DE-Juel1)186864 |b 1 |u fzj |
| 700 | 1 | _ | |a Richstein, Benjamin |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Allibert, Frederic |0 P:(DE-HGF)0 |b 3 |
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| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 8 |
| 773 | _ | _ | |a 10.1109/LED.2022.3185781 |g Vol. 43, no. 8, p. 1187 - 1190 |0 PERI:(DE-600)2034325-5 |n 8 |p 1187 - 1190 |t IEEE electron device letters |v 43 |y 2022 |x 0741-3106 |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/911181/files/SiNW_EDL_Yi_revised2-Yi.docx |
| 856 | 4 | _ | |y Restricted |u https://juser.fz-juelich.de/record/911181/files/Steep_Switching_Si_Nanowire_p-FETs_With_Dopant_Segregated_Silicide_Source_Drain_at_Cryogenic_Temperature.pdf |
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