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| Hauptseite > Publikationsdatenbank > Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature > Zugang zum Volltext |
| Hauptseite > Publikationsdatenbank > Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature > Zugang zum Volltext |
 SiNW_EDL_Yi_revised2-Yi
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Steep_Switching_Si_Nanowire_p-FETs_With_Dopant_Segregated_Silicide_Source_Drain_at_Cryogenic_Temperature
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