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@ARTICLE{Mikulics:912414,
      author       = {Mikulics, Martin and Adam, Roman and Roman Sobolewski and
                      Heidtfeld, Sarah and Cao, Derang and Bürgler, Daniel E. and
                      Schneider, Claus M. and Mayer, Joachim and Hardtdegen, Hilde
                      Helen},
      title        = {{N}ano-{LED} driven phase change evolution of layered
                      chalcogenides for {R}aman spectroscopy investigations},
      journal      = {FlatChem},
      volume       = {36},
      issn         = {2452-2627},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2022-05598},
      pages        = {100447 -},
      year         = {2022},
      abstract     = {We present a device driving testing platform based on
                      vertically integrated nano light emitting diodes (nano-
                      LEDs). The nano-LEDs with a peak wavelength emission
                      centered at ~ 445 nm were arranged in arrays and conditioned
                      using a laser-micro-annealing process to individually tune
                      their intensity. They were coupled with freestanding
                      monocrystalline Ge1Sb2Te4 nano-membranes with three
                      different thicknesses (~40, ~ 60 and ~ 90 nm) with the aim
                      of initializing ultrafast switching processes and of
                      observing phase changed states simulta- neously by Raman
                      spectroscopy. Raman spectroscopy studies reveal that the
                      optical pulses emitted from the nano-LEDs induce
                      substantial, local changes in the nano-membranes’ states
                      of the Ge1Sb2Te4 layered material. Beside the crystalline
                      state in non-exposed areas (as-grown material), amorphous
                      and different intermediate states were identified in exposed
                      areas as island-like structures with diameters ranging from
                      ~ 300 nm up to ~ 1.5 µm. The latter confirms the
                      nano-LEDs’ emission role in both near- and far-field
                      regimes, depending on the distance between nano-LED and
                      nano-membrane, for driving i.e. inducing the phase change
                      process. The results presented demonstrate the suitability
                      and potential of the vertically integrated nano-LEDs as the
                      key components for a testing platform/for electro-optical
                      convertors driving phase change processes in optically
                      active media. They could also play an important role in the
                      development of future, e.g., non-volatile data storage as
                      well as in optical and neuromorphic computing architectures
                      based on transmistor devices.},
      cin          = {ER-C-2 / PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-2-20170209 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000897552600004},
      doi          = {10.1016/j.flatc.2022.100447},
      url          = {https://juser.fz-juelich.de/record/912414},
}