Home > Publications database > Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations |
Journal Article | FZJ-2022-05598 |
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2022
Elsevier
Amsterdam
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Please use a persistent id in citations: http://hdl.handle.net/2128/33343 doi:10.1016/j.flatc.2022.100447
Abstract: We present a device driving testing platform based on vertically integrated nano light emitting diodes (nano- LEDs). The nano-LEDs with a peak wavelength emission centered at ~ 445 nm were arranged in arrays and conditioned using a laser-micro-annealing process to individually tune their intensity. They were coupled with freestanding monocrystalline Ge1Sb2Te4 nano-membranes with three different thicknesses (~40, ~ 60 and ~ 90 nm) with the aim of initializing ultrafast switching processes and of observing phase changed states simulta- neously by Raman spectroscopy. Raman spectroscopy studies reveal that the optical pulses emitted from the nano-LEDs induce substantial, local changes in the nano-membranes’ states of the Ge1Sb2Te4 layered material. Beside the crystalline state in non-exposed areas (as-grown material), amorphous and different intermediate states were identified in exposed areas as island-like structures with diameters ranging from ~ 300 nm up to ~ 1.5 µm. The latter confirms the nano-LEDs’ emission role in both near- and far-field regimes, depending on the distance between nano-LED and nano-membrane, for driving i.e. inducing the phase change process. The results presented demonstrate the suitability and potential of the vertically integrated nano-LEDs as the key components for a testing platform/for electro-optical convertors driving phase change processes in optically active media. They could also play an important role in the development of future, e.g., non-volatile data storage as well as in optical and neuromorphic computing architectures based on transmistor devices.
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