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| 001 | 912414 | ||
| 005 | 20250321202306.0 | ||
| 024 | 7 | _ | |a 10.1016/j.flatc.2022.100447 |2 doi |
| 024 | 7 | _ | |a 2128/33343 |2 Handle |
| 024 | 7 | _ | |a WOS:000897552600004 |2 WOS |
| 037 | _ | _ | |a FZJ-2022-05598 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations |
| 260 | _ | _ | |a Amsterdam |c 2022 |b Elsevier |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a We present a device driving testing platform based on vertically integrated nano light emitting diodes (nano- LEDs). The nano-LEDs with a peak wavelength emission centered at ~ 445 nm were arranged in arrays and conditioned using a laser-micro-annealing process to individually tune their intensity. They were coupled with freestanding monocrystalline Ge1Sb2Te4 nano-membranes with three different thicknesses (~40, ~ 60 and ~ 90 nm) with the aim of initializing ultrafast switching processes and of observing phase changed states simulta- neously by Raman spectroscopy. Raman spectroscopy studies reveal that the optical pulses emitted from the nano-LEDs induce substantial, local changes in the nano-membranes’ states of the Ge1Sb2Te4 layered material. Beside the crystalline state in non-exposed areas (as-grown material), amorphous and different intermediate states were identified in exposed areas as island-like structures with diameters ranging from ~ 300 nm up to ~ 1.5 µm. The latter confirms the nano-LEDs’ emission role in both near- and far-field regimes, depending on the distance between nano-LED and nano-membrane, for driving i.e. inducing the phase change process. The results presented demonstrate the suitability and potential of the vertically integrated nano-LEDs as the key components for a testing platform/for electro-optical convertors driving phase change processes in optically active media. They could also play an important role in the development of future, e.g., non-volatile data storage as well as in optical and neuromorphic computing architectures based on transmistor devices. |
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| 700 | 1 | _ | |a Adam, Roman |0 P:(DE-Juel1)130495 |b 1 |u fzj |
| 700 | 1 | _ | |a Roman Sobolewski |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Heidtfeld, Sarah |0 P:(DE-Juel1)173665 |b 3 |u fzj |
| 700 | 1 | _ | |a Cao, Derang |0 P:(DE-Juel1)177876 |b 4 |
| 700 | 1 | _ | |a Bürgler, Daniel E. |0 P:(DE-Juel1)130582 |b 5 |u fzj |
| 700 | 1 | _ | |a Schneider, Claus M. |0 P:(DE-Juel1)130948 |b 6 |u fzj |
| 700 | 1 | _ | |a Mayer, Joachim |0 P:(DE-Juel1)130824 |b 7 |u fzj |
| 700 | 1 | _ | |a Hardtdegen, Hilde Helen |0 P:(DE-Juel1)125593 |b 8 |e Corresponding author |u fzj |
| 773 | _ | _ | |a 10.1016/j.flatc.2022.100447 |g Vol. 36, p. 100447 - |0 PERI:(DE-600)2873498-1 |p 100447 - |t FlatChem |v 36 |y 2022 |x 2452-2627 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/912414/files/1-s2.0-S2452262722001143-main.pdf |y OpenAccess |
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